Novel Graphene based transistors developed by Samsung Advanced Institute of Technology; Research

Samsung presents a new graphene based transistor

Samsung Advanced Institute of Technology, R&D area for Samsung Electronics, has made a transistor based on the graphene, which is considered to be as the “miracle material”.

This research has been published online in the May 17th issue of the journal Science.

[hana-code-insert name=’StumbleUpon’ /][hana-code-insert name=’Reddit’ /]This technology is thought to replace the conventional silicon technology in the near future. For many years, scientists are decreasing the size of transistors to increase the speed of devices, i.e. performance of semiconductors, but theoretically the size limits will soon be reached. So the scientists must have to develop a material which can work faster than silicon technology and graphene could be the answer as it gives the 200 times greater mobility of electrons.

Researchers from Samsung Advanced Institute of Technology has developed a device that can be switched off without decreasing the mobility of the electrons in the graphene. They have done a great achievement as this was the problem for years that how to maintain the stability of working while allowing the graphene to switch on and off, which is essential for a transistor to represent “1” and “0” of digital signals.

This new device has been named as Barristor due to its barrier controllable feature.

Reference:

Heejun Yang, Jinseong Heo, Seongjun Park, Hyun Jae Song, David H. Seo, Kyung-Eun Byun, Philip Kim, InKyeong Yoo, Hyun-Jong Chung, Kinam Kim, (2012). Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier. Science, DOI: 10.1126/science.1220527

 

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