Samsung Electronics has started the mass production of 20 Nanometer Class 4GB low power double-data-rate 2 (LPDDR2) Mobile dynamic random access memory (DRAM) chip. It will provide the faster and slim mobile devices with longer battery life.
[hana-code-insert name=’StumbleUpon’ /][hana-code-insert name=’Reddit’ /]“Samsung began expanding the market for 4Gb DRAM last year with the first mass-produced 30nm-class DRAM, and now we are working on capturing most of the advanced memory market with our new 20nm-class 4Gb DRAM,” said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. “In the second half of this year, we expect to strongly increase the portion of 20nm-class DRAM within our overall DRAM output to make the 4Gb DRAM line-up the mainstream product in DRAM production, and therefore keeping the leadership position in the premium market and strengthening the competitive edge.”
Samsung will also deliver 2GB solutions with 0.8 mm of thickness along with four 4GB LPDDR2 chips in a single LPDDR2 package. This will give 20% less thickness to that when 2GB is used with four 30nm-class 4GB LPDDR2 chips. New 2GB package can process data at up to 1,066 megabits per second (Mbps) at the same power as the previous 30nm-class 2GB package.
According to IHS iSuppli, shipments of 4Gb LPDDR2 will steadily increase, taking approximately 13 percent of total DRAM shipments in 2012, 49 percent in 2013 and 63 percent in 2014, with 4Gb DRAM becoming the mainstream chip in the DRAM market around the end of 2013.